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F10-F220 Black Silicon Carbide Grit
Silicon Carbide Introductio
Propter raritatem moissanite naturalis, maxime carbida pii synthetica est.Usus est ut abrasive, et recentius ut semiconductor et adamas simulans gemmae qualitatis.Processus fabricandi simplicissimus est arenam silicam et carbonem in Acheson graphite resistentia electrici fornacem calidissimam miscere, inter 1,600 °C (2,910 °F) et 2,500 °C (4,530 °F).Praeclara SiO2 particulae in materia plantae (eg rice siliquis) ad SiC converti possunt calefaciendo in excessu carbonis ex materia organica.Fumus silica, qui gignendo metallum siliconis et ferrosilicon gignit, verti potest etiam in SiC calefaciendo graphite ad 1,500 °C (2,730 °F).
Carbide Pii late usus est et una materia oeconomicissima.Vocari potest corundum seu refractarium arena.Res fragilis et acuta habet electricam et calorem conductivity in aliquo gradu. Abrasives ex eo aptae sunt ad operandum ferrum, non ferrum, non ferreum, petra, corium, rubber, etc. Etiam late pro refractione materia et metallurgica adhibetur. elogium.
Silicon Carbide Chemical Compositio (%)
| Grit | Sic | FC | Fe2O3 |
| F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
| F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
| F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
| F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
| F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
| F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
| P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
| P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
| P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
| P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
| P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
| P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
Silicon Carbide Physical Index
| Grits | mole Density (g/cm3) | Princeps Density (g/cm3) | Grits | mole Density (g/cm3) | Princeps Density (g/cm3) |
| F16 ~ F24 | 1.42~1.50 | ≥1.50 | F100 | 1.36~1.45 | ≥1.45 |
| F30 ~ F40 | 1.42~1.50 | ≥1.50 | F120 | 1.34~1.43 | ≥1.43 |
| F46 ~ F54 | 1.43~1.51 | ≥1.51 | F150 | 1.32~1.41 | ≥1.41 |
| F60 ~ F70 | 1.40~1.48 | ≥1.48 | F180 | 1.31~1.40 | ≥1.40 |
| F80 | 1.38~1.46 | ≥1.46 | F220 | 1.31~1.40 | ≥1.40 |
| F90 | 1.38~1.45 | ≥1.45 |
Silicon Carbide Size Available
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh
Aliae specificationes speciales suppleri possunt in rogatu.
Silicon Carbide Applications
Pro laesura: Lapsura, politura, Artus, Stridor, Pressura rubigine.
Refractionis: Media refractoria ad fusuras seu linamenta metallurgica, Ceramica technica.
Ad novum genus applicationis: Commutatores caloris , instrumenti processus semiconductor , Liquid colamentum
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